基于硅基底的宽光谱中短波红外杜瓦窗口及制备工艺

Wide-spectrum medium short wave infrared Dewar window based on silicon substrate and preparation process

Abstract

本发明公开了一种用于探测器杜瓦封装焊接的宽光谱中短波红外窗口及制备工艺,该窗口以硅为基底材料,其中一个表面的边缘及侧面是由纳米量级镍铬层作为粘合层镀制一定厚度的金膜,称之为金属化层,用于探测器杜瓦的封装焊接。而该表面中间区域及另外一表面是以ZnS和YF3作为高低折射率材料,等效层采用ZnS和Si镀制而成的高低折射率交替的多层膜结构的宽光谱中短波红外减反射膜。该减反射膜采用离子源辅助、合适基底温度等特定工艺镀制而成。该窗口在1.2-4.8μm范围内平均透射率T>95%,且在2.7-3.0μm范围内未见YF3常见的水汽吸收峰。本发明性能稳定,适合于现代多光谱空间遥感仪器的中短波红外探测器杜瓦窗口。
The invention discloses a wide-spectrum medium short wave infrared window for detector/Dewar packaging and welding and a preparation process. The window takes silicon as the substrate material. The edges and the side of one surface of the window are plated with gold films in certain thickness, with a nanoscale nickel-chromium layer as the bonding layer. The gold films are called metalization layer, and the edges and the side are used for detector/Dewar packaging and welding. The middle areas of the surface and the other surface are plated with wide-spectrum medium short wave infrared antireflection films with multilayer film structure and alternate high/low refractive indexes, wherein the antireflection films take ZnS and YF3 as the materials with high/low refractive indexes and the equivalent layer adopts ZnS and Si. The antireflection films are plated by such specific processes as ion source assistance, appropriate substrate temperature, etc. The average transmissivity T of the window is more than 95% in the range of 1.2-4.8mu m and the water-vapor absorption peak commonly appearing on YF3 does not appear on the window in the range of 2.7-3.0mu m. The window is stable in performance and is suitable for the medium short wave infrared detectors/Dewar of the modern multi-spectrum space remote sensing instruments.

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Patent Citations (1)

    Publication numberPublication dateAssigneeTitle
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NO-Patent Citations (2)

    Title
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Cited By (2)

    Publication numberPublication dateAssigneeTitle
    CN-104035146-ASeptember 10, 2014中国科学院上海技术物理研究所Medium-short-wave infrared antireflection film on tellurium dioxide substrate
    CN-104035146-BNovember 25, 2015中国科学院上海技术物理研究所二氧化碲基底上的一种中短波红外增透膜