半导体装置及其制造方法

Semiconductor device and method of manufacturing the same

Abstract

本发明的目的在于提供一种半导体装置及其制造方法。在现有的半导体装置中,因寄生Tr的导通电流在半导体层表面流动而存在元件受到热破坏的问题。在本发明的半导体装置中,在作为漏极区域的N型扩散层(9),形成P型扩散层(14)及作为漏极导出区域的N型扩散层(10)。而且,P型扩散层(14)配置于MOS晶体管(1)的源极-漏极区域之间。根据该结构,对漏极电极(28)施加正的ESD浪涌,即便在寄生Tr1的导通电流(I1)流动的情况下,因寄生Tr1的导通电流(I1)的电流路径处于外延层深部侧,故也可防止MOS晶体管(1)受到热破坏。
In the semiconductor device according to the present invention, a P type diffusion layer and an N type diffusion layer as a drain lead region are formed on an N type diffusion layer as a drain region. The P type diffusion layer is disposed between a source region and the drain region of the MOS transistor. When a positive ESD surge is applied to a drain electrode, causing an on-current of a parasite transistor to flow, this structure allows the on-current of the parasite transistor to take a path flowing through a deep portion of an epitaxial layer. Thus, the heat breakdown of the MOS transistor is prevented.

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    CN-102842603-BMarch 25, 2015中国科学院微电子研究所Metal-oxide-semiconductor field effect transistor (MOSFET) and method for producing same
    WO-2012174769-A1December 27, 2012中国科学院微电子研究所Mosfet and manufacturing method thereof